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| Common Source Push-Pull Pair D G ARF473 AR S (Flange) D F47 3 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE * Specified 135 Volt, 130 MHz Characteristics: * Output Power = 300 Watts. * Gain = 13dB (Class AB) * Efficiency = 50% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. (each device) G 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. * High Performance Push-Pull RF Package. * High Voltage Breakdown and Large SOA for Superior Ruggedness. * Low Thermal Resistance. All Ratings: TC = 25C unless otherwise specified. ARF473 UNIT Volts Amps Volts Watts C 500 10 30 500 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts A nA mhos 500 4 25 250 100 4 0.9 3 6 1.1 5 0.1 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Forward Transconductance Match Ratio (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) / VGS(TH) VGS(TH) Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT 6-2003 050-4920 Rev C 0.35 0.1 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF473 Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 1200 140 9 5.1 4.1 12.8 4.0 1600 200 12 10 8 20 8 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Test Conditions f = 130MHz Idq = 150mA VDD = 135V MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 13 50 14 55 Pout = 300W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 26 24 22 GAIN (dB) Pout = 300W CAPACITANCE (pf) Class AB VDD = 125V 3000 Ciss 1000 500 Coss 100 50 20 18 16 14 12 10 0 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 Crss 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 12 ID, DRAIN CURRENT (AMPERES) 80 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 10 8 6 4 2 0 0 TJ = -55C DATA FOR BOTH SIDES IN PARALLEL OPERATION HERE LIMITED BY RDS (ON) 100us 1ms 10 5 6-2003 TJ = +25C TJ = +125C 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 10ms TC =+25C TJ =+200C SINGLE PULSE C 050-4920 Rev 100ms DC 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 ID, DRAIN CURRENT (AMPERES) 25 VGS=15 & 10V 9V 15 8V 6V 5.5V 5V 5 4.5V 4V ARF473 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature -25 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.4 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 Z JC 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10-4 10 Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance Freq. (MHz) 27.12 40.68 63.8 81.36 127.4 Zin () 4.78 - j 14.3 1.96 - j 9 0.59 - j 4.1 0.31 - j 1.65 0.4 + j 2.66 ZOL () 49 - j 38.8 33.6 - j 39.5 18 - j 33.5 12.3 - j 29 5.5 - j 20.3 Zin - Gate shunted with 100 IDQ = 75 mA each side ZOL - Conjugate of optimum load for 300 Watts output at Vdd = 125V Input and output impedances are measured from gate to gate and drain to drain respectively 6-2003 050-4920 Rev C ARF473 81.36 MHz Test amplifier Po = 500W @130 V L3 Vg1 C6 C7 J1 C1 T1 R1 TL1 C2 TL2 C8 C9 C4 R2 Vg2 DUT TL4 TL6 L2 J2 L1 TL3 C3 TL5 T2 C5 C10 + 130V C1 10-80 pF trimmer ARCO 462 C2-4 1000 pF NPO 500V chip C5-C9 10 nF 500V chip C10 .47 uF Ceramic 500V L1 680 nH 12t #24 enam .312" dia L2 55 nH 3t #18 enam .25" dia L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH R1-2 100 0.5 W T1 4:1 RF transformer on two beads same as L3. T2 1:1 coax balun. Fair-Rite 2643665902 bead on 1.5" RG-303 50 teflon coax. TL1-2 Printed line L=1.2" w=.23" TL3-4 Printed line L=.25" w=.23" TL5-6 Printed line L=0.25" w=.23" 0.23" wide stripline on FR-4 board is ~32 Zo Peak Output Power vs... Vdd 900 800 700 600 500 400 300 200 100 0 80 100 120 140 160 1.2 Notes: The value of L2 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. At 81 MHz its value changes from approximately 50 nH at 100V to 70 nH at 165V. The duty cycle past 100V must be reduced to insure power dissipation is within the limits of the device. Maximum pulse length should be 100mS or less. See figure 7. Max Duty Cycle 1 0.8 Po Watts 0.6 0.4 0.2 0 Drain Supply Voltage Vdd 1.100 .435 1 0.400 2 Pin 1. Drain 2. Drain 3. Gate .065 rad 2 PL 4. Gate 5. Source .005 0.390 HAZARDOUS MATERIAL WARNING 5 The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. 0.200 3 .225 4 .060 .107 1.340 6-2003 .210 C 050-4920 Rev Package Dimensions (inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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